Single N-Channel Power MOSFET 40V, 185A, 1.7mΩ

Power MOSFET 40V, 185A, 1.7 mΩ, Single N-Channel • Low RDS(on)\n• Minimize conduction loss\n• SO8FL package (5x6)\n• Space saving, thermally enhanced\n• Low input capacitance\n• Minimize switching loss\n• RoHS Compliant;

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，40V，200A，1.4mΩ

Power MOSFET 40 V, 1.4 mΩ, 200 A, Single N−Channel • Low RDS(on)\n• Minimize conduction losses\n• Low input capacitance\n• Minimize switching losses\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• Small Footprint (5x6 mm) for Compact Design\n• RoHS Compliant;

ONSEMI

安森美半导体