NTMFS4C302N

单 N 沟道，逻辑电平，功率 MOSFET，30 V，230 A，1.15 mΩ; • Small Footprint (5 x 6 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• RoHS Compliant\n;

The NTMFS4C302N is a Single N-Channel Power MOSFET with a small footprint that is perfect for compact designs.

NTMFS4C302N

MOSFET ??Single, N-Channel, Logic Level, SO-8 FL 30 V, 1.15 m, 230 A

NTMFS4C302NT1G

丝印：4C02N；Package：SO-8FL；MOSFET ??Single, N-Channel, Logic Level, SO-8 FL 30 V, 1.15 m, 230 A

NTMFS4C302NT3G

丝印：4C02N；Package：SO-8FL；MOSFET ??Single, N-Channel, Logic Level, SO-8 FL 30 V, 1.15 m, 230 A

NVMFS4C302N

PowerMOSFET30V,1.15m,241A,SingleN?묬hannelLogicLevel,SO??FL

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFS4C302NWF−WettableFlanksOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,H