NTMFS4C09N

单 N 沟道，功率 MOSFET，30V，52A，5.8mΩ; • Low RDS(on) to Minimize Conduction Losses\n• Low Capacitance to Minimize Driver Losses\n• Optimized Gate Charge to Minimize Switching Losses\n• RoHS Compliant\n;

Power MOSFET 30 V, 52 A, Single N−Channel, SO−8 FL

NTMFS4C09N

Power MOSFET

NTMFS4C09N

Power MOSFET 30 V, 52 A, Single N?묬hannel, SO?? FL

NTMFS4C09NT1G

Power MOSFET

NTMFS4C09NT1G

Power MOSFET 30 V, 52 A, Single N?묬hannel, SO?? FL

NTMFS4C09NT3G

Power MOSFET 30 V, 52 A, Single N?묬hannel, SO?? FL

NTMFS4C09NT3G

Power MOSFET

NTMFS4C09NBT1G

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 30V SO8FL

NTMFS4C09NBT3G

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 30V SO8FL