MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：131.53 Kbytes 页数：6 Pages

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丝印：1D3N4；Package：SO-8FL；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：131.53 Kbytes 页数：6 Pages

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Power MOSFET, Single, N-Channel, 40V, 1.3mΩ, 195A, SO8-FL 5x6

The latest 40V Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circ • The Latest 40VStandard Gate Level Power MOSFET Technology\n• Lower On-Resistance\n• Lower Gate Charge\n• Good Body Diode Softness;

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Power MOSFET 40 V, 1.3 m, 235 A, Single N?묬hannel

文件：346.1 Kbytes 页数：7 Pages

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Power MOSFET 40 V, 1.3 m, 235 A, Single N?묬hannel

文件：346.1 Kbytes 页数：7 Pages

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MOSFET ??Power, Single, N-Channel 40 V, 1.15 m, 252 A

文件：347.14 Kbytes 页数：7 Pages

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