Power MOSFET, 150V Single N channel 61A, 14m Ohm in Power56 package

This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Shielded Gate MOSFET Technology\n• Optimized for Low RDS-on and Qg\n• Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 29 A\n• Low Conduction Loss\n• Max rDS(on) = 16.2 mΩ at VGS = 8 V, ID = 15 A\n• 50% Lower Qrr than other mosfet suppliers\n• Lowers Switching noise /EMI\n• MSL1 Robust Package Design\n;

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MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 14 m, 61 A

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 61.3A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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MOSFET - N-Channel Shielded Gate PowerTrench

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