isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 61.3A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

MOSFET - N-Channel Shielded Gate PowerTrench

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ONSEMI

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N-channel Enhancement Mode Power MOSFET

Features  VDS= 150V, ID= 50 A RDS(ON)

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Bychip

百域芯

MOSFET - N-Channel Shielded Gate PowerTrench

文件：151.88 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel Shielded Gate PowerTrench 150 V, 15 mΩ, 61.3 A

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. Gull-wings leads for an improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications • Low RDS (ON)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• Gull-wings to improve Board Level Reliability results\n• RoHS Compliant\n• Automotive Qualified;

ONSEMI

安森美半导体