MOSFET ??Power, Dual, N-Channel 60 V, 4.2 m, 111 A

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丝印：5C650L；Package：DFN8；MOSFET ??Power, Dual, N-Channel 60 V, 4.2 m, 111 A

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双 N 沟道，功率 MOSFET，60V，111A，4.2mΩ

Industrial Power MOSFET in a 5x6 mm flat lead package designed for compact and efficient designs and including high thermal performance. • Low on resistance\n• Minimal conduction losses\n• High current capability\n• Robust load performance\n• 100% avalanche tested\n• Safeguard against voltage overstress failures\n• Pb-Free\n• RoHS Compliant\n• Small footprint (5x6 mm)\n• Compact Design;

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安森美半导体

MOSFET ??Power, Dual N-Channel 60 V, 4.2 m, 111 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C650NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

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安森美半导体