Power MOSFET

MOSFET – Power, Single, P-Channel, μCool, WDFN, 2X2 mm -12 V, -7.7 A Features • Recommended Replacement Device − NTLUS3A40P • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction • 2x2 mm Footprint Same as SC−88 Package • Lowest RDS(on) Solution in 2x2 mm Package • 1.2 V

文件：147.61 Kbytes 页数：6 Pages

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Power MOSFET

文件：135.4 Kbytes 页数：6 Pages

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安森美半导体

Power MOSFET

MOSFET – Power, Single, P-Channel, μCool, WDFN, 2X2 mm -12 V, -7.7 A Features • Recommended Replacement Device − NTLUS3A40P • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction • 2x2 mm Footprint Same as SC−88 Package • Lowest RDS(on) Solution in 2x2 mm Package • 1.2 V

文件：147.61 Kbytes 页数：6 Pages

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安森美半导体

Power MOSFET

MOSFET – Power, Single, P-Channel, μCool, WDFN, 2X2 mm -12 V, -7.7 A Features • Recommended Replacement Device − NTLUS3A40P • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction • 2x2 mm Footprint Same as SC−88 Package • Lowest RDS(on) Solution in 2x2 mm Package • 1.2 V

文件：147.61 Kbytes 页数：6 Pages

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P-Channel 20 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • Thermally Enhanced DFN2X2 Package - Small Footprint Area - Low On-Resistance APPLICATIONS • Load Switch, PA Switch, and Battery Switch for Portable Devices

文件：1.2386 Mbytes 页数：9 Pages

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Power MOSFET

文件：135.4 Kbytes 页数：6 Pages

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安森美半导体

Power MOSFET

文件：135.4 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：135.4 Kbytes 页数：6 Pages

ONSEMI

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单 P 沟道，µCool™ 功率 MOSFET，-12V，-7.7A，40mΩ

-12 V, -7.7 A, µCool™ Single P-Channel, 2x2 mm, WDFN Package • Lowest RDS(on) Solution in 2x2 mm Package\n• System Efficiency Improvement\n• WDFN Package Provides Exposed Drain Pad\n• Excellent Thermal Conduction\n• 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level GateDrive\n• Low Profile (\n• RoHS Compliant;

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安森美半导体