Power MOSFET ??0 V, ??80 mA, Single P?묬hannel with ESD Protection, SOT??23

Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 Features • P−channel Switch with Low RDS(on) • 44 Smaller Footprint and 38 Thinner than SC−89 • Low Threshold Levels Allowing 1.5 V RDS(on) Rating • Operated at Low Logic Level Gate Drive • These Devices are Pb−Free,

文件：59.59 Kbytes 页数：5 Pages

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Power MOSFET ??0 V, ??80 mA, Single P?묬hannel with ESD Protection, SOT??23

Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 Features • P−channel Switch with Low RDS(on) • 44 Smaller Footprint and 38 Thinner than SC−89 • Low Threshold Levels Allowing 1.5 V RDS(on) Rating • Operated at Low Logic Level Gate Drive • These Devices are Pb−Free,

文件：59.59 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??80 mA, Single P?묬hannel with ESD Protection, SOT??23

Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 Features • P−channel Switch with Low RDS(on) • 44 Smaller Footprint and 38 Thinner than SC−89 • Low Threshold Levels Allowing 1.5 V RDS(on) Rating • Operated at Low Logic Level Gate Drive • These Devices are Pb−Free,

文件：59.59 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：107.95 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：107.95 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：107.95 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：107.95 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：107.95 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

单 P 沟道，功率 MOSFET，带 ESD 防护，-20V，-780mA，480mΩ

Power MOSFET 20 V, 780 mA, Single P-Channel with ESD Protection, SOT-723 • P-channel Switch with Low RDS(on)\n• System Efficiency Improvement\n• 44% Smaller Footprint and 38% Thinner than SC-89\n• Board Space Saving \n• Low Threshold Levels, 1.5 V RDS(on) Rating\n• Operate at Low Voltage Gate Drive Logic Level \n• Operated at Low Logic Level Gate Drive\n• RoHS Co;

ONSEMI

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-20V P-Channel MOSFET

NTECHIP

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