SZ557F

SURFACEMOUNTSILICONZENERDIODES

Features Lowleakagecurrent Highreliability Highpeakreversepowerdissipation CompleteVoltageRange3.9to200Volts

TBC557

SILICONPNPEPITAXIALTYPE(PCTPROCESS)

PRIMARILYINTENDEDFORUSEDRIVERSTAGEOFAUDIO AMPLIFIERS. FEATURES .HighVcEO -65V(TBC556) -45V(TBC557) -30V(TBC558) .LowNoise

TESTO557

Digitalmanifold

TLP557

InverterForAirConditioner

TLP557

TRANSISTORINVERTORINVERTERFORAIRCONDITIONORPOWERTRANSISTORBASEDRIVE

TransistorInverter InverterForAirConditioner PowerTransistorBaseDrive TheTOSHIBATLP557consistsofaGaAℓAslightemittingdiodeandanintegratedphotodetector. Thisunitis8−leadDIPpackage. TLP557issuitableforbasedrivingcircuitofpowertransistormoduleupto20A. Extern

U557

CurrentRegulatorDiode

Features •InterFETN0016HGeometry •LowNoise:5nV/√HzTypical •LowCapacitance:2pFTypical •RoHSCompliant •SMT,TH,andBareDiePackageoptions. Applications •CurrentRegulation •CurrentLimiting •Biasing Description The50VInterFETU556andU557JFET’sare targetedf

ZTX557

PNPSILICONPLANARMEDIUMPOWERHIGHVOLTAGETRANSISTORS

FEATURES *300VoltVCEO *0.5Ampcontinuouscurrent *Ptot=1Watt

ZTX557

PNPSILICONPLANARMEDIUMPOWERHIGHVOLTAGETRANSISTORS

[​​​​​​​Diode] FEATURES *300VoltVCEO *0.5Ampcontinuouscurrent *Ptot=1Watt