NTH4L013N120M3S中文资料安森美半导体数据手册PDF规格书

特性 Features

 Typ. RDS(on) = 13 m @ VGS = 18 V

 Ultra Low Gate Charge (QG(tot) = 254 nC)

 High Speed Switching with Low Capacitance (Coss = 262 pF)

 100 Avalanche Tested

 This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

 Solar Inverters

 Electric Vehicle Charging Stations

 UPS (Uninterruptible Power Supplies)

 Energy Storage Systems

 SMPS (Switch Mode Power Supplies)