NVD2955

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=110V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NVF2955

PowerMOSFET??0V,??.6A,SingleP?묬hannelSOT??23

NVF2955P

PowerMOSFET??0V,??.6A,SingleP?묬hannelSOT??23

PN2955

AtomicEFIInstallKitLS1andLS6,EV1Injector

SFI2955

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=-60V ■LowRDS(ON):0.22Ω(Typ.)

SFI2955

iscP-ChannelMOSFETTransistor

SFP2955

iscP-ChannelMOSFETTransistor

SFP2955

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■175oCOperetingTemperature ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:-10mA(Max.)@VDS=-60V ■LowRDS(ON):0.22Ω(Typ.)

SFR/U2955

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=-60V ■LowerRDS(ON):0.22Ω(Typ.)

SFR2955

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=-60V ■LowerRDS(ON):0.22Ω(Typ.)