Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ 175oC Opereting Temperature ■ Extended Safe Operating Area ■ Lower Leakage Current : -10 mA (Max.) @ VDS = -60V ■ Low RDS(ON) : 0.22 Ω (Typ.)

文件：250.57 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

文件：280.7 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -60V ■ Lower RDS(ON) : 0.22 Ω (Typ.)

文件：261.7 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -60V ■ Lower RDS(ON) : 0.22 Ω (Typ.)

文件：261.7 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

文件：321.28 Kbytes 页数：2 Pages

ISC

无锡固电