Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ 175oC Opereting Temperature ■ Extended Safe Operating Area ■ Lower Leakage Current : -10 mA (Max.) @ VDS = -60V ■ Low RDS(ON) : 0.22 Ω (Typ.)

文件：250.57 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

文件：280.7 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

文件：107.34 Kbytes 页数：3 Pages

MOSPEC

统懋

PNP SILICON POWER TRANSISTOR

• Designed for Complementary Use with the TIP3055 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current • Customer-Specified Selections Available

文件：95.23 Kbytes 页数：6 Pages

POINN

POWER TRANSISTORS COMPLEMENTARY SILICON

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

文件：101.21 Kbytes 页数：4 Pages

ONSEMI

安森美半导体