Fast Recovery Rectifier, 40A, 200ns

Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete lin

文件：20.66 Kbytes 页数：2 Pages

NTE

60 V, N-channel Trench MOSFET

description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD)

文件：278.72 Kbytes 页数：14 Pages

NEXPERIA

安世

60 V, dual N-channel Trench MOSFET

description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroSta

文件：288.45 Kbytes 页数：14 Pages

NEXPERIA

安世

60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • Ele

文件：278.26 Kbytes 页数：14 Pages

NEXPERIA

安世