丝印：3C；Package：SOT323；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • Ele

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NEXPERIA

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60 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Low threshold voltage\n• Very fast switching\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection > 2 kV HBM;

Nexperia

安世

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