Silicon Schottky Barrier Rectifier

Features: ● Guarding for Stress Protection ● Low Forward Voltage ● +125°C Operating Junction Temperature

文件：18.02 Kbytes 页数：2 Pages

NTE

Silicon Rectifier Dual, Schottky Barrier

Description: The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle with a Molybenum barrier metal. Features: ● Low Forward Voltage ● Guard–Ring for Stress Protection ● Low Power Loss & High Efficiency ● Guarantee Reverse Avalanche ● +125

文件：18.03 Kbytes 页数：2 Pages

NTE

Silicon Rectifier Schottky Barrier

Description: The NTE6094 is a Schottky Barrier Rectifier in a DO5 type package designed for use as a rectifier in low–voltage, high–frequency inverters, freewheeling diodes, and polarity–protection diodes. Features: ● Guaranteed Reverse Avalanche ● Extremely Low vF ● Low Stored Charge, majori

文件：19.62 Kbytes 页数：2 Pages

NTE

Silicon Varistor Temperature Compensating Diode

文件：56.43 Kbytes 页数：1 Pages

NTE

Silicon Varistor Temperature Compensating Diode

文件：61.87 Kbytes 页数：1 Pages

NTE

Silicon Varistor Temperature Compensating Diode

文件：71.02 Kbytes 页数：1 Pages

NTE

Silicon Varistor Temperature Compensating Diode

文件：71.02 Kbytes 页数：1 Pages

NTE

Silicon Varistor Temperature Compensating Diode

文件：61.87 Kbytes 页数：1 Pages

NTE

Complementary Transistors

NTE

Rectifiers

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