Silicon Schottky Barrier Rectifier

Description: The NTE6081 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: ● Guardiring for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature ● Guaranteed Reverse Avalanche

文件：19.59 Kbytes 页数：2 Pages

NTE

Silicon Schottky Barrier Rectifier

Description: The NTE6082 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: ● Guardiring for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature

文件：19.62 Kbytes 页数：2 Pages

NTE

Schottky Barrier Rectifier

Features: • Low Power Loss, High Efficiency • High Current Capability, Low VF • High Surge Capacity Applications: • Low Voltage, High Frequency Inverters • Free Wheeling Applications • Polarity Protection Applications

文件：19.59 Kbytes 页数：2 Pages

NTE

Silicon Rectifier Schottky Barrier

Description: The NTE6084 is a silicon power rectifier in a DO4 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: ● Guardring for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature Capability ● Guaranteed Reverse A

文件：20.76 Kbytes 页数：2 Pages

NTE

Silicon Dual Schottky Rectifier

Description: The NTE6085 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: ● Plastic Package ● Metal to Silicon Rectifier, Majority Carrier Conduction ● Low Power Loss, High Efficiency

文件：21.71 Kbytes 页数：2 Pages

NTE

Silicon Dual Schottky Rectifier

Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: 20 Amps Total (10 Amps Pre Diode Leg) Guarding for Stress Protection Low Forward Voltage +150°C Operating

文件：18.46 Kbytes 页数：2 Pages

NTE

Schottky Barrier Silicon Rectifier

Features: ● Guarding for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature ● Guaranteed Reverse Avalanche

文件：18.08 Kbytes 页数：2 Pages

NTE

Silicon Dual Schottky Rectifier

Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: 20 Amps Total (10 Amps Pre Diode Leg) Guarding for Stress Protection Low Forward Voltage +150°C Operating

文件：18.46 Kbytes 页数：2 Pages

NTE

Silicon Dual Power Rectifier

Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: ● Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range ● Guarding for Stress Pr

文件：20.63 Kbytes 页数：2 Pages

NTE

Silicon Schottky Barrier Rectifier

Features: ● Guarding for Stress Protection ● Low Forward Voltage ● +125°C Operating Junction Temperature

文件：18.02 Kbytes 页数：2 Pages

NTE