0.3??Single Digit Numeric Display, Seven Segment, Common Anode

Description: The NTE3052 through NTE3055 are 0.3 inch (7.62mm) height single digit, seven segment, common anode displays. The NTE3052 utilizes LED chips which are made from GaAsP on a GaAs substrate. The NTE3054 utilizes LED chips which are made from GaP on a transparent GaP substrate. The NTE305

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NTE

0.3” Single Digit Numeric Display, Seven Segment, Common Anode

Description:\nThe NTE3052 through NTE3055 are 0.3 inch (7.62mm) height single digit, seven segment, common anode displays. The NTE3052 utilizes LED chips which are made from GaAsP on a GaAs substrate. The NTE3054 utilizes LED chips which are made from GaP on a transparent GaP substrate. The NTE3053

NTE

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

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MOSPEC

统懋

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

文件：104.43 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

POWER TRANSISTORS COMPLEMENTARY SILICON

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

文件：101.21 Kbytes 页数：4 Pages

ONSEMI

安森美半导体