Integrated Circuit Infrared Preamplifier

Description: The NTE1764 is an infrared preamplifier in a 14–Lead DIP type package and contains four main parts: the gain–controlled amplifier I, the amplifier II, the pulse–separating amplifier III, and the inverter IV. The amplifier I has a wide dynamic range and thus ensures interference

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NTE

Integrated Circuit Infrared Preamplifier

Description:\nThe NTE1764 is an infrared preamplifier in a 14–Lead DIP type package and contains four main parts: the gain–controlled amplifier I, the amplifier II, the pulse–separating amplifier III, and the inverter IV.\nThe amplifier I has a wide dynamic range and thus ensures interference free o

NTE

(SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT

MOS/FET/P-CHANNEL, ENHANCEMENT, SINGLE DUAL MOS/FET/P-CHANNEL, ENHANCEMENT

文件：123.84 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Old Company Name in Catalogs and Other Documents

文件：206.28 Kbytes 页数：10 Pages

RENESAS

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SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Dual chip type • Low On-state Resistance RDS(on)1 = 27 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34

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NEC

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