Integrated Circuit Module, Dual AF PO, 30W/Ch, Dual Power Supply

Features: • Contains Emitter Follower Circuit for Upgrading • Case Temperature +125°C is Guaranteed, Thereby Enabling Great Reduction of Heat Sink • By Attaching Muting Circuit Externally, Pop Noise at Power ON/OFF can be Rejected

文件：31.81 Kbytes 页数：2 Pages

NTE

Integrated Circuit Module, Dual AF PO, 30W/Ch, Dual Power Supply

Features:\n• Contains Emitter Follower Circuit for Upgrading\n• Case Temperature +125°C is Guaranteed, Thereby Enabling Great Reduction of Heat Sink\n• By Attaching Muting Circuit Externally, Pop Noise at Power ON/OFF can be Rejected

NTE

N-Channel Enhancement Mode Field Effect Transistor

文件：199.68 Kbytes 页数：4 Pages

NIKOSEM

尼克森

N-Channel Enhancement Mode MOSFET

文件：817.42 Kbytes 页数：8 Pages

UNIKCWuxi U-NIKC Semiconductor CO.,LTD

旭康微无锡旭康微电子有限公司

N-Channel Enhancement Mode Field Effect Transistor

文件：202.42 Kbytes 页数：4 Pages

NIKOSEM

尼克森