Power MOSFET 18 A, 60 V, Logic Level N.Channel DPAK

MOSFET – Power, N-Channel, Logic Level, DPAK 18 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV18N06L • These Devices are Pb−Free and are RoHS Compliant Typical

文件：169.03 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 65mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.43 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 65mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.85 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET 18 A, 60 V, Logic Level N.Channel DPAK

MOSFET – Power, N-Channel, Logic Level, DPAK 18 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV18N06L • These Devices are Pb−Free and are RoHS Compliant Typical

文件：169.03 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET

MOSFET – Power, N-Channel, Logic Level, DPAK 18 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV18N06L • These Devices are Pb−Free and are RoHS Compliant Typical

文件：92.06 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 18 A, 60 V, Logic Level N.Channel DPAK

ONSEMI

安森美半导体