isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.62 Kbytes 页数：2 Pages

ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 55A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.12 Kbytes 页数：2 Pages

ISC

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文件：152.72 Kbytes 页数：7 Pages

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Power MOSFET 30 V, 55 A, Single N?묬hannel, DPAK/IPAK

文件：152.72 Kbytes 页数：7 Pages

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文件：152.72 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 55 A, Single N?묬hannel, DPAK/IPAK

文件：152.72 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

功率 MOSFET，30V，55A，8mΩ，单 N 沟道，DPAK

功率 MOSFET，30V，55A，单 N 沟道，DPAK 封装 • Low RDS(on)\n• Low Capacitance\n• Optimized Gate Charge;

ONSEMI

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