Isolated 1W Dual Output SM DC-DC Converters

RoHS compliant Efficiency up to 78 Wide temperature performance at full 1 Watt load, –40°C to 85°C UL 94V-0 Package material Footprint over pins 1.64cm2 Lead frame technology 3.3V, 5V & 12V inputs 3.3V, 5V, 9V, 12V & 15V outputs Internal SMD construction Toroidal magnetics 1kVDC Isolati

文件：669.26 Kbytes 页数：9 Pages

MuRata

村田

Isolated 1W Dual Output SM DC-DC Converters

RoHS compliant Efficiency up to 78 Wide temperature performance at full 1 Watt load, –40°C to 85°C UL 94V-0 Package material Footprint over pins 1.64cm2 Lead frame technology 3.3V, 5V & 12V inputs 3.3V, 5V, 9V, 12V & 15V outputs Internal SMD construction Toroidal magnetics 1kVDC Isolati

文件：669.26 Kbytes 页数：9 Pages

MuRata

村田

Isolated 1W Dual Output SM DC-DC Converters

RoHS compliant Efficiency up to 78 Wide temperature performance at full 1 Watt load, –40°C to 85°C UL 94V-0 Package material Footprint over pins 1.64cm2 Lead frame technology 3.3V, 5V & 12V inputs 3.3V, 5V, 9V, 12V & 15V outputs Internal SMD construction Toroidal magnetics 1kVDC Isolati

文件：669.26 Kbytes 页数：9 Pages

MuRata

村田

THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY

DPA Series • 16 Pin DIP SSR • Ratings to 1A @ 280 VAC • SCR output • Voltage or current-control input • Zero-crossing (resistive loads) output

文件：1.26469 Mbytes 页数：20 Pages

crydom

THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY

DPA Series • 16 Pin DIP SSR • Ratings to 1A @ 280 VAC • SCR output • Voltage or current-control input • Zero-crossing (resistive loads) output

文件：1.26469 Mbytes 页数：20 Pages

crydom

Small Signal MOSFET 20 V, 238 mA, Single, N?묬hannel, Gate ESD Protection, SC??5

MOSFET – Single, N-Channel, Gate ESD Protection, Small Signal, SC-75 20 V, 238 mA Features • Low Gate Charge for Fast Switching • Small 1.6 x 1.6 mm Footprint • ESD Protected Gate • AEC−Q101 Qualified and PPAP Capable − NVA4001N • These Devices are Pb−Free and are RoHS Compliant Application

文件：61.02 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 20 V, 238 mA, Single, N?묬hannel, Gate ESD Protection, SC??5

MOSFET – Single, N-Channel, Gate ESD Protection, Small Signal, SC-75 20 V, 238 mA Features • Low Gate Charge for Fast Switching • Small 1.6 x 1.6 mm Footprint • ESD Protected Gate • AEC−Q101 Qualified and PPAP Capable − NVA4001N • These Devices are Pb−Free and are RoHS Compliant Application

文件：61.02 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 20 V, 238 mA, Single, N?묬hannel, Gate ESD Protection, SC??5

MOSFET – Single, N-Channel, Gate ESD Protection, Small Signal, SC-75 20 V, 238 mA Features • Low Gate Charge for Fast Switching • Small 1.6 x 1.6 mm Footprint • ESD Protected Gate • AEC−Q101 Qualified and PPAP Capable − NVA4001N • These Devices are Pb−Free and are RoHS Compliant Application

文件：61.02 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

AT90USB1287 (AVR) 64 QFN device (2.7V VCC 5.5V)

Overview This document describes the AT88CK109STK3, which is a development kit for the AT88SA100, AT88SA102, and ATSA8810HS CryptoAuthentication devices. This kit uses a modular approach. The development kit includes the AT88Microbase board and the AT88CK109BK3 CryptoAuthentication daughter board

文件：857.72 Kbytes 页数：38 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

NTAG 5 boost - NFC Forum-compliant I2C bridge for tiny devices

General description NTAG 5 boost uses active load modulation (ALM) to deliver robust and reliable communication with NFC phones, bringing a new level of convenience to tiny devices. NXP’s NTAG 5 boost shrinks the NFC footprint while adding AES security, so designers can deliver ultra-compact d

文件：1.22351 Mbytes 页数：133 Pages

恩XP