NPN Silicon Transistor

Descriptions • Switching application • Interface circuit and driver circuit application Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary pair with NT358

文件：228.63 Kbytes 页数：3 Pages

AUK

Switching application

文件：232.99 Kbytes 页数：3 Pages

KODENSHI

可天士

Digital Transistors

Kodenshi-AUK

Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz

Description: The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: ● Specified 28V, 175MHz Characteristics − Output Power = 7.0 Watts Minimum Gain = 8.4dB Efficiency = 60 ● Characterized from

文件：73.63 Kbytes 页数：2 Pages

NTE

3V Video Amplifier with 6dB Gain and Filter in SC70

文件：329.84 Kbytes 页数：15 Pages

BURR-BROWN

250MHz, Rail-to-Rail I/O, CMOS Operational Amplifier with Shutdown

文件：424.89 Kbytes 页数：23 Pages

BURR-BROWN