Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz

Description: The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: ● Specified 28V, 175MHz Characteristics − Output Power = 7.0 Watts Minimum Gain = 8.4dB Efficiency = 60 ● Characterized from

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NTE

RF transistors

NTE

DEVICE SPECIFICATION FOR PHOTOCOUPLER

■ Description PC357N Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat package. Input-output isolation voltage(rms) is 3.75kV. Collector-emitter voltage is 80V(∗) and CTR is 50 to 600 at input current of 5mA. ■ Features 1. 4-pin Mini-flat pac

文件：741.8 Kbytes 页数：15 Pages

SHARPSharp Corporation

夏普

DEVICE SPECIFICATION FOR PHOTOCOUPLER

■ Description PC357N Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat package. Input-output isolation voltage(rms) is 3.75kV. Collector-emitter voltage is 80V(∗) and CTR is 50 to 600 at input current of 5mA. ■ Features 1. 4-pin Mini-flat pac

文件：741.8 Kbytes 页数：15 Pages

SHARPSharp Corporation

夏普

AUTOMOTIVE RECTIFIER

Features ● Low cost ● Low leakage ● Low forward voltage drop ● High current capability

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GOOD-ARK

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