Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz

Description: The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: ● Specified 28V, 175MHz Characteristics − Output Power = 7.0 Watts Minimum Gain = 8.4dB Efficiency = 60 ● Characterized from

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NTE

RF transistors

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TI

德州仪器