NSS60601MZ4中文资料低 VCE(sat) 晶体管，NPN，60 V，6.0 A数据手册ONSEMI规格书

描述 Description

The combination of low saturation voltage and high gain makes this Bipolar Transistor an ideal device for high speed switching applications where power saving is a concern.

特性 Features

• Low Collector-Emitter Saturation Voltage
• Minimized power loss
• High DC Current Gain
• Very low current requirements
• High Current-Gain Bandwidth Product
• Ideal for high frequency designs
• Superior gain linearity
• Minimal distortion
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

应用 Application

• Linear voltage regulation
• Power management for portable devices
• Switching regulator
• Inductive load driver (e.g. motors, fans, relays)
• Linear controls
• Battery chargers
• Portable devices
• Computing products

简介

NSS60601MZ4属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由ONSEMI制造生产的NSS60601MZ4晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。