NSS40300MZ4中文资料3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor数据手册ONSEMI规格书

描述 Description

The combination of low saturation voltage and high gain makes this 3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor an ideal device for high speed switching applications where power saving is a concern.

特性 Features

• Low Collector-Emitter Saturation Voltage
• Minimized power loss
• High DC Current Gain
• Very low current requirements
• High Current-Gain Bandwidth Product
• Ideal for high frequency designs
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• NSS40301MZ4 is NPN complimentary device
• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

应用 Application

• Voltage regulation
• Power management for portable devices
• Switching regulator
• Inductive load driver
• Battery chargers
• Portable devices
• Computing products

简介

NSS40300MZ4属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的NSS40300MZ4晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。