NSS35200CF8T1G中文资料Low VCE(sat) Transistor, PNP, 35 V, 2.0 A数据手册ONSEMI规格书

描述 Description

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

特性 Features

• Very Low Saturation
• High Current Switching 2A DC, 7A Peak
• High Current Gain
• High Cut Off Frequency
• Low Profile Package
• Linear Gain (Beta)
• This is a Pb-Free Device

应用 Application

• DC/DC Converter
• Complimentary Driver
• Supply line Load Switch
• Current Extention & Low Drop Out Regulation
• Battery Charging, Linear & Pulsed
• Cathode Florescent Lamp drive
• Peripheral Driver - LEDs, Motors, Relays

简介

NSS35200CF8T1G属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由ONSEMI制造生产的NSS35200CF8T1G晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。