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NSS35200MR6T1G_ONSEMI/安森美半导体_两极晶体管 - BJT 2A 35V Low VCEsat中天科工二部
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产品属性
- 类型
描述
- 型号:
NSS35200MR6T1G
- 功能描述:
两极晶体管 - BJT 2A 35V Low VCEsat
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
PNP 集电极—基极电压
- VCBO:
集电极—发射极最大电压
- VCEO:
- 40 V 发射极 - 基极电压
- VEBO:
- 6 V
- 增益带宽产品fT:
直流集电极/Base Gain hfe
- Min:
100 A
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerFLAT 2 x 2
供应商
- 企业:
中天科工半导体(深圳)有限公司
- 商铺:
- 联系人:
李先生
- 手机:
13128990370
- 询价:
- 电话:
13128990370/微信同号
- 地址:
深圳市福田区赛格广场54层5406-5406B
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