20 V, 4.0 A, Low VCE(sat) NPN Transistor

文件：135.01 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

NPN Transistor

文件：134.8 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

20 V, 4.0 A, Low VCE(sat) NPN Transistor

文件：131.45 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

20 V, 4.0 A, Low VCE(sat) NPN Transistor

文件：135.01 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

NPN Transistor

文件：134.8 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

低饱和压 晶体管，NPN，20 V，4.0 A

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. • High Current, Low VCE(sat), ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)\n• Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion\n• NSV Prefix for Auto;

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 2A SOT23-3

ONSEMI

安森美半导体