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NSR2030DMX中文资料2A，30V，肖特基半桥数据手册ONSEMI规格书
NSR2030DMX规格书详情
描述 Description
These half bridge Schottky barrier diodes are designed for the
rectification of the high speed signal of wireless charging. The
NSR2030DMX has a very low forward voltage that will reduce
conduction loss. It is housed in a XDFN 2.0 x 1.35 x 0.4 mm package
that is ideal for space constrained wireless applications.
特性 Features
• Low Forward Voltage − 0.54 V (Typ) @ IF = 2 A
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
• Extremely Fast Switching Speed
• Low Leakage - 5 uA @ VF= 30 V
应用 Application
• Wireless Charging for Wearables, Portable Electronics and Smartphones - PRU
• Power Rectification
• Wearables, Portable Electronics and Smartphones - PRU
技术参数
- 制造商编号
：NSR2030DMX
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Active
- Configuration
：Dual
- VRRM Min (V)
：30
- VF Max (V)
：0.65
- IRM Max (µA)
：20
- IO(rec) Max (A)
：-
- IFSM Max (A)
：8
- trr Max (ns)
：25
- Cj Max (pF)
：76
- Package Type
：XDFN-4
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+/25+ |
365 |
原装正品现货库存价优 |
询价 | |||
ON |
17+16+15+ |
DFN |
1510 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SXSEMI |
24+ |
DSN2 |
900000 |
原装进口特价 |
询价 | ||
ON(安森美) |
23+ |
18379 |
公司只做原装正品,假一赔十 |
询价 | |||
ON Semiconductor |
22+ |
4UDFN (3.5x3.5) |
9000 |
原厂渠道,现货配单 |
询价 | ||
ON |
25+ |
DFN |
50000 |
原厂原装,价格优势 |
询价 | ||
ON |
25+23+ |
2-DSN |
25238 |
绝对原装正品全新进口深圳现货 |
询价 | ||
NS |
22+ |
DIP18 |
3000 |
原装正品,支持实单 |
询价 | ||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
24+ |
6000 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 |
