2A, 30V Schottky Half Bridge

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2A, 30V Schottky Half Bridge

文件：66.5 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

2A，30V，肖特基半桥

These half bridge Schottky barrier diodes are designed for the\nrectification of the high speed signal of wireless charging. The\nNSR2030DMX has a very low forward voltage that will reduce\nconduction loss. It is housed in a XDFN 2.0 x 1.35 x 0.4 mm package\nthat is ideal for space constrained wirel • Low Forward Voltage − 0.54 V (Typ) @ IF = 2 A\n• These Devices are Pb−Free, Halogen Free and are RoHS Compliant\n• Extremely Fast Switching Speed\n• Low Leakage - 5 uA @ VF= 30 V;

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安森美半导体

Schottky Full Bridge

文件：76.41 Kbytes 页数：4 Pages

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安森美半导体

2A, 30V Schottky Full Bridge

These full bridge Schottky barrier diodes are designed for the rectification of the high speed signal of wireless charging. The NSR2030QMUTWG has a very low forward voltage that will reduce conduction loss. It is housed in a UDFN 3.5 x 3.5 x 0.5 mm package that is ideal for space constrained w

文件：127.9 Kbytes 页数：6 Pages

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安森美半导体

Integrated Circuit High Voltage Segment Driver for Gas Discharge Tubes

Description: The NTE2030 is capable of driving 8 segments of a high voltage display tube with a constant output sink current, which can be adjusted by external program resistor, Rp. The program current is half that of output “ON” current. In the “OFF” state the outputs can tolerate more than 80

文件：25.66 Kbytes 页数：3 Pages

NTE