200 mA, 30 V Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in a spacing saving x3DFN 0201 package ideal for space constraint applications. Features  Low Forward Voltage Drop

文件：226.33 Kbytes 页数：5 Pages

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安森美半导体

Schottky Barrier Diode

文件：97.25 Kbytes 页数：4 Pages

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安森美半导体

200 mA, 30 V Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in a spacing saving x3DFN 0201 package ideal for space constraint applications. Features  Low Forward Voltage Drop

文件：226.33 Kbytes 页数：5 Pages

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安森美半导体

200 mA, 30 V Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in a spacing saving x3DFN 0201 package ideal for space constraint applications. Features  Low Forward Voltage Drop

文件：226.33 Kbytes 页数：5 Pages

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安森美半导体

200 mA, 30 V Schottky Barrier Diode

文件：104.27 Kbytes 页数：4 Pages

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安森美半导体

Schottky Barrier Diode

文件：97.25 Kbytes 页数：4 Pages

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安森美半导体

200 mA，30 V，x3DFN 0201 肖特基势垒二极管

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications.They are housed in a space saving x3DFN 0201 package ideal for space constraint applications. • Low Forward Voltage Drop\n• Reduces Power Dissipation\n• High Switching Speed\n• Better Performance\n• Low Reverse Current\n• Reduces Power Dissipation\n• These devices are Pb-free, Halogen free/BFR free and are RoHS compliant;

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安森美半导体

Package：0201（0603 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 200MA 2DFN

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安森美半导体