NSI66说明书PDF资料库存现货纳芯微电子NOVO-114ic电子网

首页 >NSI66>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
NSI66	文件：2.68501 Mbytes Page：34 Pages	High Reliability Isolated Dual-Channel Gate Driver Key Features Isolated dual channel driver Input side supply voltage: 2.7V to 5.5V Driver side supply voltage: up to 25V with UVLO 4A peak source and 6A peak sink output High CMTI: ±150kV/μs typical 25ns typical propagation delay 5ns maximum delay matching 6ns maximum pulse width di 文件：2.68501 Mbytes 页数：34 Pages	NOVO 纳芯微电子	NOVO
NSI6602	文件：2.68501 Mbytes Page：34 Pages	High Reliability Isolated Dual-Channel Gate Driver Key Features Isolated dual channel driver Input side supply voltage: 2.7V to 5.5V Driver side supply voltage: up to 25V with UVLO 4A peak source and 6A peak sink output High CMTI: ±150kV/μs typical 25ns typical propagation delay 5ns maximum delay matching 6ns maximum pulse width di 文件：2.68501 Mbytes 页数：34 Pages	NOVO 纳芯微电子	NOVO
NSI6602AD	文件：2.68501 Mbytes Page：34 Pages	High Reliability Isolated Dual-Channel Gate Driver Key Features Isolated dual channel driver Input side supply voltage: 2.7V to 5.5V Driver side supply voltage: up to 25V with UVLO 4A peak source and 6A peak sink output High CMTI: ±150kV/μs typical 25ns typical propagation delay 5ns maximum delay matching 6ns maximum pulse width di 文件：2.68501 Mbytes 页数：34 Pages	NOVO 纳芯微电子	NOVO
NSI6602A-DLAR	文件：2.68501 Mbytes Page：34 Pages	High Reliability Isolated Dual-Channel Gate Driver Key Features Isolated dual channel driver Input side supply voltage: 2.7V to 5.5V Driver side supply voltage: up to 25V with UVLO 4A peak source and 6A peak sink output High CMTI: ±150kV/μs typical 25ns typical propagation delay 5ns maximum delay matching 6ns maximum pulse width di 文件：2.68501 Mbytes 页数：34 Pages	NOVO 纳芯微电子	NOVO
NSI6602A-DSPNR	文件：2.68501 Mbytes Page：34 Pages	High Reliability Isolated Dual-Channel Gate Driver Key Features Isolated dual channel driver Input side supply voltage: 2.7V to 5.5V Driver side supply voltage: up to 25V with UVLO 4A peak source and 6A peak sink output High CMTI: ±150kV/μs typical 25ns typical propagation delay 5ns maximum delay matching 6ns maximum pulse width di 文件：2.68501 Mbytes 页数：34 Pages	NOVO 纳芯微电子	NOVO
NSI6602A-DSWKR	文件：2.68501 Mbytes Page：34 Pages	High Reliability Isolated Dual-Channel Gate Driver Key Features Isolated dual channel driver Input side supply voltage: 2.7V to 5.5V Driver side supply voltage: up to 25V with UVLO 4A peak source and 6A peak sink output High CMTI: ±150kV/μs typical 25ns typical propagation delay 5ns maximum delay matching 6ns maximum pulse width di 文件：2.68501 Mbytes 页数：34 Pages	NOVO 纳芯微电子	NOVO
NSI6602A-DSWR	文件：2.68501 Mbytes Page：34 Pages	High Reliability Isolated Dual-Channel Gate Driver Key Features Isolated dual channel driver Input side supply voltage: 2.7V to 5.5V Driver side supply voltage: up to 25V with UVLO 4A peak source and 6A peak sink output High CMTI: ±150kV/μs typical 25ns typical propagation delay 5ns maximum delay matching 6ns maximum pulse width di 文件：2.68501 Mbytes 页数：34 Pages	NOVO 纳芯微电子	NOVO
NSI6602B-DLAR	文件：2.68501 Mbytes Page：34 Pages	High Reliability Isolated Dual-Channel Gate Driver Key Features Isolated dual channel driver Input side supply voltage: 2.7V to 5.5V Driver side supply voltage: up to 25V with UVLO 4A peak source and 6A peak sink output High CMTI: ±150kV/μs typical 25ns typical propagation delay 5ns maximum delay matching 6ns maximum pulse width di 文件：2.68501 Mbytes 页数：34 Pages	NOVO 纳芯微电子	NOVO
NSI6602B-DSPNR	文件：2.68501 Mbytes Page：34 Pages	High Reliability Isolated Dual-Channel Gate Driver Key Features Isolated dual channel driver Input side supply voltage: 2.7V to 5.5V Driver side supply voltage: up to 25V with UVLO 4A peak source and 6A peak sink output High CMTI: ±150kV/μs typical 25ns typical propagation delay 5ns maximum delay matching 6ns maximum pulse width di 文件：2.68501 Mbytes 页数：34 Pages	NOVO 纳芯微电子	NOVO
NSI6602B-DSWKR	文件：2.68501 Mbytes Page：34 Pages	High Reliability Isolated Dual-Channel Gate Driver Key Features Isolated dual channel driver Input side supply voltage: 2.7V to 5.5V Driver side supply voltage: up to 25V with UVLO 4A peak source and 6A peak sink output High CMTI: ±150kV/μs typical 25ns typical propagation delay 5ns maximum delay matching 6ns maximum pulse width di 文件：2.68501 Mbytes 页数：34 Pages	NOVO 纳芯微电子	NOVO

技术参数

VCC UVLO 阈值 (V)：
9
输入侧VCC电压(Max)(V)：
18
输出侧VCC电压(Max)(V)：
35
CMTI(Min) (kV/us)：
150
隔离耐压(kVrms)：
3
绝缘等级：
基础绝缘
特性：
分立输出
工作温度 (°C)：
-40~125
产品等级：
工业级
封装：
SOP8

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市正纳电子有限公司	NSI6602B-DSPNR	NA	26+	NA	26094	10年以上分销经验原装进口正品,做服务型企业	询价
深圳市河锋鑫科技有限公司	NSI6602B-DSPNR				80000		询价
深圳市祥瑞智科技有限公司	NSI6601B-DSPR	NOVOSENSE	25+	SOP-8	2500	原厂原装,价格优势	询价
深圳市胜彬电子有限公司	NSI6602B-DSWR	NOVOSENSE/纳芯	22+	SOP-16	9000	原装正品,支持实单!	询价
深圳科宇泰科技有限公司	NSI6622B-DSWR	NOVOSENSE/纳芯微	21+	SOW16	1000	保证原装正品,需要直接联系张小姐,13544103396	询价
深圳市赛特兴科技有限公司	NSI6602B-DSWR	NOVOSENSE	23+	SOIC-16	10000	正规渠道,只有原装!	询价
亚泰电子科技有限公司	NSI6622A-DSWR	NOVOSENSE	22+	SMD	499000		询价
深圳市瑞卓芯科技有限公司	NSI6602A-DSWR	ST/意法	22+	SOW-16	5000	原装正品	询价
深圳市大时代电子有限公司	NSI6602B-DSPNR	NOVOSENSE/纳芯微	21+	SOP16	4300	原装正品	询价
上海皇华信息科技有限公司	NSI6651ALC-DSWR	NOVOSENSE(纳芯微)	2239		4000	纳芯微授权代理,自营现货	询价

更多NSI66供应商更新时间2026-7-27 16:53:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2026 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号