丝印：NSF0612A0；Package：SOT429-2；1200 V, 60 mΩ, N-channel SiC MOSFET

1. General description The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3- pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice

文件：1.24372 Mbytes 页数：15 Pages

NEXPERIA

安世

丝印：NSF0612A0；Package：SOT8071-1；1200 V, 60 mΩ, N-channel SiC MOSFET

1. General description The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in

文件：1.24219 Mbytes 页数：15 Pages

NEXPERIA

安世

丝印：NSF0812A0；Package：SOT8071-1；1200 V, 80 mOhm, N-channel SiC MOSFET

1. General description The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in h

文件：1.24324 Mbytes 页数：15 Pages

NEXPERIA

安世

丝印：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1002G；Package：LFPAK8；Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1002CLTWG) Features • Complement to NSS1001CL • Large Current Capacitance • Low Collector to E

文件：369.2 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1002G；Package：LFPAK8；Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1002CLTWG) Features • Complement to NSS1001CL • Large Current Capacitance • Low Collector to E

文件：369.2 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1002G；Package：LFPAK8；Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1002CLTWG) Features • Complement to NSS1001CL • Large Current Capacitance • Low Collector to E

文件：369.2 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NS692417；10/100/1000Base-T Single Port Transformer Module

文件：205 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商