丝印：NS；Package：SOD-323HE；Zener Diode

文件：2.21752 Mbytes 页数：10 Pages

ROHM

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丝印：NS；Package：SOD-323HE；Zener Diode

文件：2.26111 Mbytes 页数：10 Pages

ROHM

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丝印：NS；Package：SOD-323HE；Zener Diode

文件：2.2377 Mbytes 页数：10 Pages

ROHM

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丝印：NS；Package：SOD-323HE；Zener Diode

文件：2.26821 Mbytes 页数：10 Pages

ROHM

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丝印：NS；Package：SOD-323HE；Zener Diode

文件：2.24432 Mbytes 页数：10 Pages

ROHM

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丝印：NS4215；Package：TSSOP-24；STEREO 8.5W Non-Clip CLASS-D AUDIO POWER AMPLIFIER

Description The NS4215 is a stereo, non-clip, filterless, Class-D audio power amplifier. It operates from 5V to 12V supply into 8Ω load. When powered with 12V supply voltage, the NS4215 is capable of delivering 8.5W (per channel) into 8Ω load, with THD+D less than 10. It operates from 5V to 9V

文件：808.23 Kbytes 页数：20 Pages

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丝印：NSF0312A0；Package：SOT429-2；1200 V, 30 mΩ, N-channel SiC MOSFET

1. General description The NSF030120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in

文件：1.23688 Mbytes 页数：15 Pages

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安世

丝印：NSF0312A0；Package：SOT8071-1；1200 V, 30 mΩ, N-channel SiC MOSFET

1. General description The NSF030120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in h

文件：1.26335 Mbytes 页数：15 Pages

NEXPERIA

安世

丝印：NSF0412A0；Package：SOT429-2；1200 V, 40 mΩ, N-channel SiC MOSFET

1. General description The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in

文件：1.24085 Mbytes 页数：15 Pages

NEXPERIA

安世

丝印：NSF0412A0；Package：SOT8071-1；1200 V, 40 mΩ, N-channel SiC MOSFET

1. General description The NSF040120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in h

文件：1.26588 Mbytes 页数：15 Pages

NEXPERIA

安世