NRVBD1035VCTL分立半导体产品的二极管-整流器-单规格书PDF中文资料

NRVBD1035VCTL属于分立半导体产品的二极管-整流器-单。由安森美半导体公司制造生产的NRVBD1035VCTL二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。

The MBRD1035CTL employs the Schottky Barrier principle in a

large area metal−to−silicon power diode. State of the art geometry

features epitaxial construction with oxide passivation and metal

overlay contact. Ideally suited for low voltage, high frequency

switching power supplies, free wheeling diode and polarity protection diodes.

特性 Features

• Highly Stable Oxide Passivated Junction

• Guardring for Stress Protection

• Matched Dual Die Construction −

May be Paralleled for High Current Output

• High dv/dt Capability

• Short Heat Sink Tap Manufactured − Not Sheared

• Very Low Forward Voltage Drop

• Epoxy Meets UL 94 V−0 @ 0.125 in

• SBRD8 and NRVBD Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 Gram (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• ESD Rating:

♦ Human Body Model = 3B (> 8 kV)

♦ Machine Model = C (> 400 V)