Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

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Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

文件：231.35 Kbytes 页数：7 Pages

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安森美半导体

Switch-mode Schottky Power Rectifier

文件：74.18 Kbytes 页数：6 Pages

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安森美半导体

Schottky Power Rectifier, Switch-mode, 10 A, 35 V

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, • Highly Stable Oxide Passivated Junction\n• Guardring for Stress Protection\n• Matched dual die construction - May be Paralleled for High Current Output\n• High dv/dt Capability\n• Short Heat Sink Tap Manufactured - Not Sheared\n• Very Low Forward Voltage Drop\n• Epoxy Meets UL94, VO at 1/8\"Mechan;

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安森美半导体

Switch-mode Schottky Power Rectifier

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安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY DPAK

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安森美半导体