Press Fit Triac, 25 Amps

文件：159.67 Kbytes 页数：2 Pages

NAINA

Thermally-enhanced industry standard package

文件：624.84 Kbytes 页数：8 Pages

etc2List of Unclassifed Manufacturers

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Gallium Nitride 28V, 23W RF Power Transistor

文件：624.84 Kbytes 页数：8 Pages

MA-COM

23W RF Power Transistor

文件：624.84 Kbytes 页数：8 Pages

MA-COM

Gallium Nitride 28V, 125W RF Power Transistor

文件：1.06465 Mbytes 页数：13 Pages

MA-COM

Thermally enhanced industry standard package

文件：1.06465 Mbytes 页数：13 Pages

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125W RF Power Transistor

文件：1.06465 Mbytes 页数：13 Pages

MA-COM

GaN Amplifier 28 V, 23 W, DC - 3 GHz

The NPT25015 GaN HEMT is a power transistor optimized for DC - 3 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 23 W. This transistor is assembled in an industry standard surface mount plastic package. The NPT25015 is ideally suited for defense commu ·Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz\n·23 W P3dB peak envelope power (PEP)\n·1.5 W linear power @ 2% EVM for single carrier OFDM, 10.3 dB peak/average, 3.5 MHz channel bandwidth, 14 dB gain, 23.5% efficiency, 2500- 2700 MHz\n·100% RF tested\n·Therma;

MACOM

GaN Amplifier 28 V, 125 W, 2.1 - 2.7 GHz

For load-pull data and non-linear models, please send an e-mail to applications@macom.com. ·Optimized for CW, Pulsed, WiMAX, W-CDMA, LTE and Other Applications from 2100 – 2700MHz\n·High Reliability Gold Metallization Process\n·Thermally Enhanced Industry Standard Package\n·100% RF Tested\n·Characterized for Operation up to 32V\n·10W Linear Power @ 2.0% EVM for Single Carrier OFDM;

MACOM

Gallium Nitride 28V, 125W RF Power Transistor

MACOM