Gallium Nitride 28V, 23W RF Power Transistor

文件：624.84 Kbytes 页数：8 Pages

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Thermally-enhanced industry standard package

文件：624.84 Kbytes 页数：8 Pages

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GaN Amplifier 28 V, 23 W, DC - 3 GHz

The NPT25015 GaN HEMT is a power transistor optimized for DC - 3 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 23 W. This transistor is assembled in an industry standard surface mount plastic package. The NPT25015 is ideally suited for defense commu ·Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz\n·23 W P3dB peak envelope power (PEP)\n·1.5 W linear power @ 2% EVM for single carrier OFDM, 10.3 dB peak/average, 3.5 MHz channel bandwidth, 14 dB gain, 23.5% efficiency, 2500- 2700 MHz\n·100% RF tested\n·Therma;

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23W RF Power Transistor

文件：624.84 Kbytes 页数：8 Pages

MA-COM

Package：8-SOIC（0.154"，3.90mm 宽）裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：HEMT N-CH 28V 23W DC-3GHZ 8SOIC

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