NPA1008A数据手册MACOM中文资料规格书

描述 Description

The NPA1008A is an integrated GaN on silicon power amplifier optimized for 20 - 2700 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 mm 24-lead QFN plastic package. The NPA1008A is ideally suited for general purpose narrowband to broadband applications.

特性 Features

·GaN on Si HEMT D-Mode Integrated Amplifier
·100% RF Tested
·45% Drain Efficiency
·28 V Operation
·50 Ω Input Matched
·Broadband Operation from 20 - 2700 MHz
·Suitable for linear and saturated applications
·Lead-Free 4 x 4 mm 24-lead PQFN Package
·RoHS* Compliant

应用 Application

·Defense Communications
·land mobile radio
·Test and measurement
·Wireless Infrastructure