NPA1006A数据手册MACOM中文资料规格书

描述 Description

The NPA1006A is a GaN on silicon amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5 W (41 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1006A is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure.

特性 Features

·GaN on Si HEMT D-Mode Amplifier
·Suitable for Linear & Saturated Applications
·Broadband Operation from 20 - 1000 MHz
·50 Ω Input Matched, Output Unmatched
·28 V Operation
·14 dB Gain @ 900 MHz
·65% Drain Efficiency @ 900 MHz
·100% RF Tested
·Lead-Free 6 x 5 mm 8-lead PDFN Package
·Halogen-Free “Green” Mold Compound
·RoHS* Compliant

应用 Application

·Defense Communications
·land mobile radio
·Test and measurement
·Wireless Infrastructure