NPA1006中文资料GaN Amplifier 28 V, 12 W, 0.020 - 1.0 GHz数据手册MACOM规格书

描述 Description

The NPA1006 is a wideband GaN power amplifier optimized for 20 - 1000 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 12.5 W (41 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1006 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure.

特性 Features

·GaN on Si HEMT D-Mode Amplifier
·Lead-Free 6 x 5 mm 8-lead PDFN Package
·100% RF Tested
·65% Drain Efficiency @ 900 MHz
·14 dB Gain @ 900 MHz
·28 V Operation
·50 O Input Matched, Output Unmatched
·Broadband operation from 20 - 1000 MHz
·Suitable for linear and saturated applications
·Halogen-Free “Green” Mold Compound
·RoHS* Compliant and 260°C Reflow Compatible

应用 Application

·Defense Communications
·Wireless Infrastructure