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型号	下载订购	功能描述	制造商上传企业	LOGO
NP80N03KLE	文件：429.64 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 26 文件：429.64 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP80N03KLE-E1-AY	文件：429.64 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 26 文件：429.64 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP80N03KLE-E2-AY	文件：429.64 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 26 文件：429.64 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP80N03MDE	文件：372.54 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：372.54 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
NP80N03MDE	文件：297.39 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2600 pF TYP. 文件：297.39 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP80N03MDE	文件：219.37 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID 文件：219.37 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NP80N03MDE-S18-AY	文件：219.37 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID 文件：219.37 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NP80N03MDE-S18-AY	文件：297.39 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2600 pF TYP. 文件：297.39 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP80N03MLE	文件：429.64 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 26 文件：429.64 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP80N03MLE	文件：372.55 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：372.55 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

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技术参数

封装形式：
DFN5*6
Vds(V)：
30
ID(A)25°C：
80
VGS(±V)：
20
Rdson@10V Typ(mΩ)：
3.3
Rdson@4.5V Tpy(mΩ)：
4.9

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市粤骏腾电子科技有限公司	NP80N03	LN	24+	DFN56	78418	原装正品现货供应	询价
深圳市一线半导体有限公司	NP80N03KLE	NEC	24+	TO-263	8866		询价
深圳市威尔健半导体有限公司	NP80N03KLE低压MOS管	VBSEMI/台湾微碧	23+	TO-263	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	NP80N03NDE	NEC	25+	TO-220	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	NP80N03KDE	NEC	2022+	TO-263	12888	原厂代理终端免费提供样品	询价
深圳市恒达亿科技有限公司	NP80N03KDE-E1	NEC	25+	SOT-263	4500	全新原装、诚信经营、公司现货销售	询价
贸泽芯城（深圳）电子科技有限公司	NP80N03NDE	NEC	23+	TO-220	33000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市胜彬电子有限公司	NP80N03KDE-E1/-AY/JM	NEC	22+	NA	3000	原装正品,支持实单	询价
深圳市威雅利发展有限公司	NP80N03KLE	VBsemi	21+	TO263	10026	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市赛美科科技有限公司	NP80N03KDE-E1	NEC		SOT-263	7751	一级代理原装正品假一罚十价格优势长期供货	询价

更多NP80N03供应商更新时间2026-3-17 16:07:00

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