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NP80N03

场效应管

Natlinear

南麟

NP80N03CDE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID

文件:219.37 Kbytes 页数:10 Pages

NEC

瑞萨

NP80N03CDE

MOS FIELD EFFECT TRANSISTOR

FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2600 pF TYP.

文件:297.39 Kbytes 页数:12 Pages

RENESAS

瑞萨

NP80N03CDE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:372.54 Kbytes 页数:2 Pages

ISC

无锡固电

NP80N03CDE-S12-AZ

MOS FIELD EFFECT TRANSISTOR

FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2600 pF TYP.

文件:297.39 Kbytes 页数:12 Pages

RENESAS

瑞萨

NP80N03CDE-S12-AZ

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID

文件:219.37 Kbytes 页数:10 Pages

NEC

瑞萨

NP80N03CLE

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID

文件:96.86 Kbytes 页数:8 Pages

NEC

瑞萨

NP80N03CLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 26

文件:429.64 Kbytes 页数:12 Pages

RENESAS

瑞萨

NP80N03CLE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:372.55 Kbytes 页数:2 Pages

ISC

无锡固电

NP80N03CLE-S12-AZ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 26

文件:429.64 Kbytes 页数:12 Pages

RENESAS

瑞萨

技术参数

  • 封装形式:

    DFN5*6

  • Vds(V):

    30

  • ID(A)25°C:

    80

  • VGS(±V):

    20

  • Rdson@10V Typ(mΩ):

    3.3

  • Rdson@4.5V Tpy(mΩ):

    4.9

供应商型号品牌批号封装库存备注价格
LN
24+
DFN56
78418
原装正品现货供应
询价
NEC
24+
TO-263
8866
询价
VBSEMI/台湾微碧
23+
TO-263
50000
全新原装正品现货,支持订货
询价
NEC
25+
TO-220
10000
原装现货假一罚十
询价
NEC
2022+
TO-263
12888
原厂代理 终端免费提供样品
询价
NEC
25+
SOT-263
4500
全新原装、诚信经营、公司现货销售
询价
NEC
23+
TO-220
33000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NEC
22+
NA
3000
原装正品,支持实单
询价
VBsemi
21+
TO263
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NEC
SOT-263
7751
一级代理 原装正品假一罚十价格优势长期供货
询价
更多NP80N03供应商 更新时间2026-3-17 16:07:00