MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on

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MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on

文件：259.839 Kbytes 页数：11 Pages

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MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on

文件：259.839 Kbytes 页数：11 Pages

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60 V – 45 A – N-channel Power MOS FET Application: Automotive

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)  Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)  Designed for automotive application an

文件：287.26 Kbytes 页数：10 Pages

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60 V – 45 A – N-channel Power MOS FET Application: Automotive

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)  Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)  Designed for automotive application an

文件：287.26 Kbytes 页数：10 Pages

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60 V – 45 A – N-channel Power MOS FET Application: Automotive

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)  Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)  Designed for automotive application an

文件：287.26 Kbytes 页数：10 Pages

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60 V – 45 A – N-channel Power MOS FET Application: Automotive

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)  Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)  Designed for automotive application an

文件：287.26 Kbytes 页数：10 Pages

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60 V – 45 A – N-channel Power MOS FET Application: Automotive

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)  Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)  Designed for automotive application an

文件：287.26 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low input capacitance Ciss = 1600 pF TYP. • Built-in gate protection diode

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.01 Kbytes 页数：2 Pages

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