40 V ??30 A ??Dual N-channel Power MOS FET

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40 V ??30 A ??Dual N-channel Power MOS FET

文件：620.41 Kbytes 页数：9 Pages

RENESAS

瑞萨

40 V ??30 A ??Dual N-channel Power MOS FET

文件：620.41 Kbytes 页数：9 Pages

RENESAS

瑞萨

40 V – 30 A – Dual N-channel Power MOS FET

NP29N04QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. • Super low on-state resistance RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 15 A)\n• Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)\n• Designed for automotive application and AEC-Q101 qualified\n• Small size package 8-pin HSON dual;

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