丝印：NP2；Package：SOT353；DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS

Features - Ultra-Small Surface Mount Package - Surface Mount Package Suited for Automated Assembly - Simplifies Circuit Design and Reduces Board Space - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standar

文件：436.05 Kbytes 页数：6 Pages

DIODES

美台半导体

-40V – -20A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 25 m Max. ( VGS = -10 V, ID = -10 A ) RDS(on) = 38 m Max. ( VGS = -4.5 V, ID = -10 A )  Low input capacitance : Ciss = 16

文件：1.33998 Mbytes 页数：8 Pages

RENESAS

瑞萨

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -20A@ TC=25℃ ·Drain Source Voltage -VDSS= -40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.46 Kbytes 页数：2 Pages

ISC

无锡固电

-40V – -20A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 25 m Max. ( VGS = -10 V, ID = -10 A ) RDS(on) = 38 m Max. ( VGS = -4.5 V, ID = -10 A )  Low input capacitance : Ciss = 16

文件：1.33998 Mbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Product Scout Automotive

文件：307.49 Kbytes 页数：9 Pages

RENESAS

瑞萨

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -20A@ TC=25℃ ·Drain Source Voltage -VDSS= -40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.47 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

Product Scout Automotive

文件：307.49 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Product Scout Automotive

文件：307.49 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS(on) = 47 m MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 m MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 m MAX. (VGS = –4.5 V, ID = –10 A

文件：126.55 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS(on) = 47 m MAX. (VGS = –10 V, ID = –10 A) RDS(on) = 64 m MAX. (VGS = –5 V, ID = –10 A) RDS(on) = 70 m MAX. (VGS = –4.5 V, ID = –10 A

文件：126.55 Kbytes 页数：8 Pages

RENESAS

瑞萨