型号：SSM6N813R；Package：TSOP6F；MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 110 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 88 mΩ (typ.) (@VGS = 10 V)

文件：431.93 Kbytes 页数：9 Pages

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东芝

型号：SSM6N813RLF；Package：TSOP6F；MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 110 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 88 mΩ (typ.) (@VGS = 10 V)

文件：431.93 Kbytes 页数：9 Pages

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型号：SSM6N813RLXGF；Package：TSOP6F；MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 110 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 88 mΩ (typ.) (@VGS = 10 V)

文件：431.93 Kbytes 页数：9 Pages

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东芝

型号：SSM6N813RLXHF；Package：TSOP6F；MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 110 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 88 mΩ (typ.) (@VGS = 10 V)

文件：431.93 Kbytes 页数：9 Pages

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型号：SSM6N813R；Package：TSOP6F；Power Management Switches

文件：434.77 Kbytes 页数：9 Pages

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东芝

型号：NNB；HEB breakaway and non-breakaway in-line fuse holders for UL 13/32??x 1-1/2??supplemental fuses

文件：841.73 Kbytes 页数：6 Pages

COOPER

型号：NNB；HEB breakaway and non-breakaway in-line fuse holders for UL 13/32??x 1-1/2??supplemental fuses

文件：996.42 Kbytes 页数：6 Pages

EATON

伊顿