4.0A 650V N-CHANNEL POWER MOSFET

文件：863.11 Kbytes 页数：7 Pages

DGNJDZ

南晶电子

N-Channel Enhancement MOSFET

Features  VDS=650V, ID=4A  RDS(ON)=2.2Ω@VGS=10V(Typ.)  High Power and current handing capabilit y  Lead free product is acquired Main Applications  Battery Protection  Load Switch  Power Management

文件：300.38 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

文件：1.96573 Mbytes 页数：11 Pages

RECTRON

丽正国际

N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% avalanche energy test

文件：1.96573 Mbytes 页数：11 Pages

RECTRON

丽正国际